Performance comparison of Pb„Zr0.52Ti0.48...O3-only and Pb„Zr0.52Ti0.48...O3-on-silicon resonators

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate PZT –only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance RX and quality factor Q with the resonators’ silicon layer thickness tSi . For identical lateral dimensions and PZT-layer thicknesses tPZT , the PZT-on-silicon resonator has higher resonant frequency fC , higher Q 5100 versus 140 , lower RX 51 versus 205 , and better linearity third-order input intercept point IIP3 of +43.7 dBm versus +23.3 dBm . In contrast, the PZT-only resonator demonstrated much wider frequency tuning range 5.1% versus 0.2% . © 2008 American Institute of Physics. DOI: 10.1063/1.3046717